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A 2GHz GaN Class-J power amplifier for base station applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
Publisher or commissioning bodyInstitute of Electrical and Electronics Engineers (IEEE)
Publication dateJan 2011
Pages5 - 8
ISBN (Print)9781424484164
DOIs
StatePublished

Conference

ConferenceIEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
CountryUnited States
CityPhoenix, Arizona
Period1/01/11 → …

Abstract

The design and implementation of a high efficiency Class-J power amplifier (PA) for base station applications is reported. A commercially available 10 W GaN HEMT device was used, for which a large-signal model and an extrinsic parasitic model were available. Following Class-J theory, the needed harmonic terminations at the output of the transistor were defined and realised. Experimental results show good agreement with simulations verifying the class of operation. Efficiency above 70% is demonstrated with an output power of 39.7 dBm at an input drive of 29 dBm. High efficiency is sustained over a bandwidth of 140 MHz.

Additional information

Conference Proceedings/Title of Journal: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Conference Organiser: IEEE Rose publication type: Conference contribution Additional information: With accompanying conference presentation and conference poster Sponsorship: The authors would like to thank Michael Paynter for providing the extrinsic parasitics model and Cree Inc. for providing the devices used in this work. The work reported in this paper has formed part of the Green Radio Research Programme of the Virtual Centre of Excellence in Mobile & Personal Communications, Mobile VCE, www.mobilevce.com. Fully detailed technical reports on this research are available to Industrial Members of Mobile VCE. Terms of use: Copyright © 2011 IEEE. Reprinted with permission, from - K Mimis, KA Morris, J McGeehan; 'A 2GHz GaN Class-J power amplifier for base station applications ', IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), 2011; January 2011. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Documents

DOI

Research areas

  • Gallium compounds, power amplifiers, high electron mobility transistors

Event

IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

Duration1 Jan 2011 → …
CountryUnited States
CityPhoenix, Arizona

Event: Conference

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