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Evaluation of commercial GaN HEMTs for pulsed power applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationIET European Pulsed Power Conference, 2009, Geneva, Switzerland
Publisher or commissioning bodyInstitution of Engineering and Technology (IET)
Publication dateSep 2009
Pages1 - 4
Number of pages4
ISBN (Print)9781849191449
StatePublished

Conference

ConferenceIET European Pulsed Power Conference
CountrySwitzerland
CityGeneva
Period1/09/09 → …

Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.

Additional information

Rose publication type: Conference contribution Sponsorship: This work has been partially supported by MBDA.

Research areas

  • GaN, power amplifiers, HEMTs, pulsed RF, radar

Event

IET European Pulsed Power Conference

Duration1 Sep 2009 → …
CountrySwitzerland
CityGeneva

Event: Conference

Documents

Documents

  • Conference poster

    Author final version (often known as postprint) , 23 MB, PDF-document

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