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Fabrication of photonic crystal structures by focused ion beam etching

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication6th International Conference on Transparent Optical Networks (ICTON 2004), Wroclaw, Poland
Publisher or commissioning bodyInstitute of Electrical and Electronics Engineers (IEEE)
Pages135 - 138
Number of pages9
ISBN (Print)0780383435
StatePublished - Jul 2004


Conference6th International Conference on Transparent Optical Networks


Two methods for Focused Ion Beam (FIB) etching of photonic crystal are presented. The first is a FIB-alone approach which is a very rapid, maskless process. This method has the disadvantage that it produces poor sidewall verticality, which leads to high losses in slab waveguide based systems. A second approach uses FIB to etch a metal mask layer, this is followed by reactive ion etching (RIE) of a SiO2 layer and a final inductively coupled plasma (ICP) etch of the InP layer. Results show much improved sidewall verticality.

Additional information

Rose publication type: Conference contribution Terms of use: Copyright © 2004 IEEE. Reprinted from 6th International Conference on Transparent Optical Networks, 2004. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Research areas

  • Focused Ion Beam (FIB) etching


6th International Conference on Transparent Optical Networks

Duration4 Jul 20048 Jul 2004

Event: Conference




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