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Focused ion beam-based fabrication of nanostructured photonic devices

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1266 - 1277
Number of pages12
JournalJournal of Selected Topics in Quantum Electronics
Journal issue6
StatePublished - Nov 2005


This paper presents results for focused ion beam (FIB) processing of two photonic devices: 1) a GaN laser with a fourth-order grating for vertical emission, and 2) a two-dimensional (2-D) photonic crystal (PhC) structure. For the GaN laser, both L-I and I-V results are shown before and after etching, and vertical emitted power as a function of the distance along grating is shown. A finite element (FE)-based electromagnetic model is developed to support the measured results and is used to predict the optimum grating depth. For the 2-D photonic crystal, direct FIB etching is used to create a PhC in a standard InP waveguide structure. Measured and modeled transmission results are compared, and there is good agreement for band edge position. A detailed study of hole shape is presented, and this leads to the development of a multistage etching procedure involving both reactive ion etching and inductively coupled plasma etching. This results in a much improved hole shape.

Additional information

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Research areas

  • focused ion beam (FIB), photonic crystals (PhCs), gratings

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  • Cryan IEEE quantum electronics 2005

    Rights statement: Copyright © 2005 IEEE. Reprinted from IEEE Journal of Selected Topics in Quantum Electronics. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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