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The impact of baseband electrical memory effects on the dynamic transfer characteristics of microwave power transistors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationWorkshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits 2010 (INMMIC) Gothenberg, Sweden
Publisher or commissioning bodyInstitute of Electrical and Electronics Engineers (IEEE)
Publication dateApr 2010
Pages148 - 151
Number of pages4
ISBN (Print)9781424474103
DOIs
StatePublished

Workshop

WorkshopWorkshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits
CountrySweden
CityGoteborg
Period1/04/10 → …

Abstract

The inter-modulation distortion products can vary both in terms of amplitude and asymmetry due to the effects of baseband and 2nd harmonic impedance. This paper presents an investigation into the relationship between the IMD asymmetries caused by baseband impedance variation and the looping or hysteresis that can sometimes appear in the dynamic transfer characteristics of microwave power devices when subjected to modulated excitation. The investigation is carried out using a 2W GaN HFET bare die device characterized at 2.1GHz, and using IF active load-pull to clarify the role of baseband impedance on observed hysteresis in the dynamic transfer characteristics. Analysis is performed using the envelope domain in order to more effectively reveal the DUT's sensitivity to impedance environments and specifically electrical baseband memory effects.

Additional information

Rose publication type: Conference contribution Sponsorship: This work has been carried out as part of EPSRC grant EP/F033702/1. The authors would also like to thank CREE for supporting this activity and supplying the devices; specifically Ray Pengelly and Mr. Simon Wood. Terms of use: Copyright © 2010 IEEE. Reprinted from Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Bristol's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Research areas

  • envelope domain, hysteresis, GaN, IF active load pull, inter-modulation, memory effects

Event

Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

Duration1 Apr 2010 → …
CountrySweden
CityGoteborg

Event: Workshop

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DOI

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