|Pages||462 - 472|
|Number of pages||11|
|Journal||IEEE Journal of Quantum Electronics|
|Journal publication date||Jun 2007|
We present the results of calculations of the microcavity mode structure of distributed-Bragg-reflector (DBR) micro-pillar microcavities of group III-V semiconductor materials. These structures are suitable for making single photon sources when a single quantum dot is located at the center of a wavelength scale cavity. The 3-D finite difference time domain (FDTD) method is our primary simulation tool and results are validated against semi-analytic models. We show that high light extraction efficiencies can be achieved (>90%) limited by sidewall scattering and leakage. Using radial trench DBR microcavities or 2-D photonic crystal structures, we can further suppress sidewall emission, however, light is then redirected into other leaky modes
Publisher: Insitute of Electrical and Electronics Engineers (IEEE)
Rose publication type: Journal article
Sponsorship: This work was supported in part by the EPSRC IRC in Quantum Information Processing
and by the European Commission under the Integrated Project Qubit Applications.
The work of J.G. Rarity was supported by the Royal Society through a Wolfson Merit Award
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- Bragg reflection, cavity quantum electrodynamics, light confinement, optical microcavities, photonic bandgaps, quantum dots, spontaneous emission modification