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Professor Martin H H KuballDiplom(Kaiserslautern), Ph.D.(Stuttgart)

Professor of Physics (Royal Society Wolfson Research Merit Award Holder)

1 - 10 out of 297Page size: 10
  1. 2019
  2. Published

    Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modification

    Ouachan, I., Kuball, M., Liu, D., Dyer, K., Ward, C. & Hamerton, I., 21 May 2019, WindEurope Conference and Exhibition 2019: Delivering a Clean Economy for All European: Proceedings of a meeting held 2-4 April 2019, Bibao, Spain. 1 ed. Vol. 1222. 11 p. 012016. (Journal of Physics: Conference Series).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  3. E-pub ahead of print

    Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

    Yuan, C., Li, J., Lindsay, L., Cherns, D., Pomeroy, J., Liu, S., Edgar, J. H. & Kuball, M. H. H., 2 May 2019, In : Communications Physics. 2, 8 p., 43.

    Research output: Contribution to journalArticle

  4. Published

    Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors

    Jiang, S., Lee, K. B., Zaidi, Z. H., Uren, M. J., Kuball, M. & Houston, P. A., 1 Apr 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1688-1693 6 p., 8648532.

    Research output: Contribution to journalArticle

  5. Published

    Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers

    Singh, M., Karboyan, S., Uren, M. J., Lee, K. B., Zaidi, Z., Houston, P. A. & Kuball, M., 1 Apr 2019, In : Microelectronics Reliability. 95, p. 81-86 6 p.

    Research output: Contribution to journalArticle

  6. Published

    Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology

    Chandrasekar, H., Uren, M., Casbon, M. A., Hirshy, H., Eblabla, A., Elgaid, K., Pomeroy, J., Tasker, P. & Kuball, M., 1 Apr 2019, In : IEEE Transactions on Electron Devices. 66, 4, p. 1681-1687 7 p., 8641454.

    Research output: Contribution to journalArticle

  7. Published

    Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

    Rackauskas, B., Uren, M., Kachi, T. & Kuball, M., Apr 2019, In : Microelectronics Reliability. 95, p. 48-51 4 p.

    Research output: Contribution to journalArticle

  8. Published

    Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

    Chauhan, P., Hasenöhrl, S., Dobročka, E., Chauvat, M. P., Minj, A., Gucmann, F., Vančo, Ľ., Kováč, Jr., J., Kret, S., Ruterana, P., Kuball, M., Šiffalovič, P. & Kuzmík, J., 14 Mar 2019, In : Journal of Applied Physics. 125, 10, 11 p., 105304 .

    Research output: Contribution to journalArticle

  9. Accepted/In press

    Annealing effect of surface-activated bonded diamond/Si interface

    Zhou, Y., Gucmann, F., Manikant, M., Pomeroy, J. & Kuball, M., 13 Feb 2019, (Accepted/In press) In : Diamond and Related Materials.

    Research output: Contribution to journalArticle

  10. Published

    Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices

    Middleton, C., Chandrasekar, H., Singh, M., Pomeroy, J. W., Uren, M. J., Francis, D. & Kuball, M., 1 Feb 2019, In : Applied Physics Express. 12, 2, 024003.

    Research output: Contribution to journalArticle

  11. Published

    Raman Thermography of Peak Channel Temperature in β-Ga2O3 MOSFETs

    Pomeroy, J. W., Middleton, C., Singh, M., Dalcanale, S., Uren, M. J., Wong, M. H., Sasaki, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M. & Kuball, M., 1 Feb 2019, In : IEEE Electron Device Letters. 40, 2, p. 189-192 4 p., 8581472.

    Research output: Contribution to journalArticle

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