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Above 600 mV Open-Circuit Voltage BiI3 Solar Cells

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1882-1886
Number of pages5
JournalACS Energy Letters
Volume3
Issue number8
DOIs
DateAccepted/In press - 11 Jul 2018
DatePublished (current) - 11 Jul 2018

Abstract

Phase-pure BiI3 films obtained by versatile gas-phase iodination of Bi2S3 are investigated as an absorber in photovoltaic devices. This preparation method leads to highly crystalline BiI3 films featuring a rhombohedral phase and a high-degree of stacking order. The films are composed of micrometer-sized flat grains distributed homogeneously across the F-doped SnO2 (FTO) substrate, exhibiting an indirect band gap transition at 1.72 eV. High-level calculations based on G0W0 approximation are used to rationalize the electronic structure of BiI3, confirming the band gap value estimated experimentally. The films show p-type conductivity with an acceptor density on the order of 1015 cm-3. Solar cells with the architecture glass/FTO/TiO2/BiI3/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), display a record open-circuit voltage above 600 mV and overall power conversion efficiency of 1.2% under AM 1.5G illumination. The large open-circuit potential is rationalized in terms of carrier lifetimes longer than 1 ns as probed by time-resolved photoluminescence spectroscopy.

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    Rights statement: This is the author accepted manuscript (AAM). The final published version (version of record) is available online via ACS at https://pubs.acs.org/doi/10.1021/acsenergylett.8b01182. Please refer to any applicable terms of use of the publisher.

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