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Observation of Complete Photonic Bandgap in Low Refractive Index Contrast Inverse Rod-Connected Diamond Structured Chalcogenides

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1248-1254
Number of pages7
JournalACS Photonics
Volume6
Issue number5
Early online date9 Apr 2019
DOIs
DateAccepted/In press - 9 Apr 2019
DateE-pub ahead of print - 9 Apr 2019
DatePublished (current) - 15 May 2019

Abstract

Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to nhigh/nlow ∼1.9. We confirm this threshold by measuring a complete photonic bandgap in the infrared region in Sn-S-O (n∽1.9) and Ge-Sb-S-O (n∽2) inverse rod-connected diamond structures. The structures were fabricated using a low-temperature chemical vapor deposition process, via a single-inversion technique. This provides a reliable fabrication technique of complete photonic bandgap materials and expands the library of backfilling materials, leading to a wide range of future photonic applications.

    Research areas

  • direct laser writing, two-photon lithography, chemical vapor deposition, chalcogenide materials, photonic bandgap, three-dimensional photonic crystals

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Documents

  • Full-text PDF (accepted author manuscript)

    Rights statement: This is the author accepted manuscript (AAM). The final published version (version of record) is available online via ACS at https://pubs.acs.org/doi/10.1021/acsphotonics.9b00184 . Please refer to any applicable terms of use of the publisher.

    Accepted author manuscript, 2 MB, PDF-document

    Embargo ends: 9/04/20

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