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Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationIEEE Asia Pacific Microwave Conference, 2009 (APMC 2009), Singapore
Publisher or commissioning bodyInstitute of Electrical and Electronics Engineers (IEEE)
Pages1601 - 1604
Number of pages4
ISBN (Print)9781424428014
DOIs
DatePublished - 21 Sep 2009

Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5GHz.

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